DPG60C200HB
ns
3
A
TVJ
=°C25
reverse recovery time
A
7
35
55
ns
IRM
max. reverse recovery current
IF
=A;30
VR
=V130
T=125°CVJ
-diF/dt
=A/μs200
trr
TVJ
=°C25
T=125°CVJ
V = VR
200
Symbol Definition
Ratings
typ. max.
IR
V
IFAV
A
VF
1.34
RthJC
0.95 K/W
min.
30
VRSM
V
1
T = 25°CVJ
T = °CVJ
150
mA
0.1
V = VR
200
T = 25°CVJ
I = AF
30
V
T = °CC
140
Ptot
160
W
T = 25°CC
RthCH
K/W
max. non-repetitive reverse blocking voltage
reverse current, drain current
forward voltage drop
total power dissipation
Conditions
Unit
1.63
T = 25°CVJ
VF0
V
0.70
T = °CVJ
175
rF
10.5
m?
V
1.06
T = °CVJ
150
I = AF
30
V
1.39
I = AF
60
I = AF
60
threshold voltage
slope resistance
for power loss calculation only
μA
VRRM
V
200
max. repetitive reverse blocking voltage
T = 25°CVJ
CJ
42
junction capacitance
V = VR
150 T = 25°Cf = 1 MHz
VJ
pF
IFSM
t = 10 ms; (50 Hz), sine; T = 45°CV = 0 VR
VJ
max. forward surge current
T = °CVJ
175
360
A
rectangular 0.5d =
average forward current
thermal resistance junction to case
thermal resistance case to heatsink
Fast Diode
200
0.25
IXYS reserves the right to change limits, conditions and dimensions.
20131126b
Data according to IEC 60747and per semiconductor unless otherwise specified
? 2013 IXYS all rights reserved